pb l ead -fr ee ds30467 rev. 6 - 2 1 of 4 mmdt3906v www.diodes.com diodes incorporated epitaxial planar die construction ideal for low power amplification and switching ultra-small surface mount package lead free by design/rohs compliant (note 1) qualified to aec-q101 standards for high reliability features maximum ratings @ t a = 25 c unless otherwise specified a m l b c h k g d c 1 b 2 e 2 c 2 e 1 b 1 mechanical data case: sot-563 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 20 terminals: lead bearing terminal plating available. see ordering information page 4, note 6 marking & type code information: see last page ordering information: see last page weight: 0.003 grams (approximate) mmdt3906v dual pnp small signal surface mount transistor characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -200 ma power dissipation (note 3) p d 150 mw thermal resistance, junction to ambient r ja 833 c/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm see note 2 c 1 b 2 e 2 c 2 e 1 b 1 new product notes: 1. no purposefully added lead. 2. package is non-polarized. parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. thermal characteristics @ t a = 25 c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 150 mw thermal resistance, junction to ambient r ja 833 c/w
ds30467 rev. 6 - 2 2 of 4 mmdt3906v www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -40 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -40 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -3.0v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -3.0v on characteristics (note 4) dc current gain h fe 60 80 100 60 30 300 i c = -100a, v ce = -1.0v i c = -1.0ma, v ce = -1.0v i c = -10ma, v ce = -1.0v i c = -50ma, v ce = -1.0v i c = -100ma, v ce = -1.0v collector-emitter saturation voltage v ce(sat) -0.25 -0.40 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.65 -0.85 -0.95 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo 4.5 pf v cb = -5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo 10 pf v eb = -0.5v, f = 1.0mhz, i c = 0 input impedance h ie 2.0 12 k v ce = 10v, i c = 1.0ma, f = 1.0khz voltage feedback ratio h re 0.1 10 x 10 -4 small signal current gain h fe 100 400 output admittance h oe 3.0 60 s current gain-bandwidth product f t 250 mhz v ce = -20v, i c = -10ma, f = 100mhz noise figure nf 4.0 db v ce = -5.0v, i c = -100 a, r s = 1.0k f = 1.0khz switching characteristics delay time t d 35 ns v cc = -3.0v, i c = -10ma, v be(off) = 0.5v, i b1 = -1.0ma rise time t r 35 ns storage time t s 225 ns v cc = -3.0v, i c = -10ma, i b1 = i b2 = -1.0ma fall time t f 75 ns notes: 4. short duration test pulse used to minimize self-heating. new product
ds30467 rev. 6 - 2 3 of 4 mmdt3906v www.diodes.com 0.5 0.6 0.7 0.8 0.9 1 . 0 1 10 100 v , base-emitter (v) saturation voltage be(sat) i , collector current (ma) fig. 5, typical base-emitter saturation volta g e vs. collector current c i c i b =10 0.01 0.1 10 1 1 10 100 1000 v , collector-emitter (v) saturation voltage ce(sat) i , collector current (ma) fig. 4, typical collector-emitter saturation voltage vs. collector current c i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) fig. 3, typical dc current gain vs collector current c t = -25c a t = +25c a t = 125c a v = 1.0v ce 1 100 10 0.1 1 10 100 c , input capacitance (pf) c , output capacitance (pf) ibo obo v , collector-base voltage (v) fig. 2, input and output capacitance vs. collector-base volta g e cb f=1mhz cibo cobo -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) fi g . 1, deratin g curve - total a p , power dissipation (mw) d new product
ds30467 rev. 5 - 2 4 of 4 mmdt3906v www.diodes.com new product month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key kar = product type marking code ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september marking information year 2004 2005 2006 2007 2008 2009 code r st u vw kar ym device packaging shipping mmdt3906v-7 sot-563 3000/tape & reel MMDT3906V-7-L sot-563 3000/tape & reel ordering information notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 6. "-l" suffix on part number indicates pb/sn terminal plating. "-l" version is a non lead-free, non rohs-compliant device. (note 5)
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